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采用硅烷偶联剂(KH-560)对nano-Si3N4进行表面处理,然后以此作为4,4′-二氰酸酯基二苯基甲烷(BCE)的改性剂,制备了nano-Si3N4/BCE电子封装材料,并研究了该体系的静态力学性能、动态力学性能以及介电性能。结果表明:nano-Si3N4的加入提高了材料的冲击强度和弯曲强度,当w(nano-Si3N4)=3%时,冲击强度、弯曲强度分别由纯BCE的10.1 kJ/m2和94.11 MPa提高到14.58 kJ/m2和112.13 MPa;Nano-Si3N4/BCE体系的储能模量在低温区略低于纯BCE体系,在高温区则略高于纯BCE体系;改性体系的介电常数高于纯BCE体系,但介电损耗因子则低于纯BCE体系。
The nano-Si3N4 was surface-treated with a silane coupling agent (KH-560) and then used as a modifier for 4,4’-dicyanate-based diphenylmethane (BCE) to prepare nano-Si3N4 / BCE electronic packaging materials, and studied the system static mechanical properties, dynamic mechanical properties and dielectric properties. The results show that the impact strength and flexural strength of nano-Si3N4 are increased from 10.1 kJ / m2 and 94.11 MPa for pure BCE to 14.58% for w (nano-Si3N4) = 3% kJ / m2 and 112.13 MPa, respectively. The storage modulus of Nano-Si3N4 / BCE system is slightly lower than that of pure BCE system at low temperature and slightly higher than that of pure BCE at high temperature. The dielectric constant of the modified system is higher than pure BCE System, but the dielectric loss factor is lower than the pure BCE system.