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利用I-V法和C-V法对由电镀形成的,和经不同温度热处理的(Ni/n-GaAs,Ni-Pd/n-GaAs,Pd/n-GaAs)肖特基结的主要物理参数进行了测量;并应用最小二乘回归法,编排了计算机程序,通过计算获得了比较精确的有关参数;同时还用俄歇电子能谱观察了这些样品中的金属与GaAs各组分的深度分布,及其不同深度下俄歇电子谱.研究结果表明,我们所采用的工艺能获得近理想的肖特基势垒,适当温度的热处理可进一步改善肖特基二极管性能.如果热处理高于这个适当的温度范围,则导致镓和砷的外扩散,二极管的性能也就明显劣化.
The main physical parameters of the (Ni / n-GaAs, Ni-Pd / n-GaAs, Pd / n-GaAs) Schottky junction formed by electroplating and heat-treated at different temperatures were measured by the IV method and the CV method ; And the least squares regression method was used to arrange the computer program to obtain more accurate relevant parameters by calculation. At the same time, the depth distribution of each metal and GaAs component in these samples was also observed by Auger electron spectroscopy Auger electron spectroscopy at different depths.The results show that the process we used to obtain nearly ideal Schottky barrier, the appropriate temperature of the heat treatment can further improve the Schottky diode performance.If the heat treatment is higher than the appropriate temperature range , Leads to the external diffusion of gallium and arsenic, the performance of the diode also significantly deteriorates.