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本文通过MOCVDGaInP的生长速率，组分In的气相分配比与生长温度的关系，较强细地对GaInP生长过程中的热力学进行了研究，并研究了低温GaInP缓冲层对高温GaInP外延生长的影响，根据GaInP的组分．随生长温度的变化关系，生长出质量较好的短波长Ga0.65In0.35P材料．
In this paper, the thermodynamics of GaInP growth process is investigated with the growth rate of MOCVDGaInP and the gas phase distribution ratio of In, and the influence of low-temperature GaInP buffer layer on GaInP epitaxial growth at high temperature is studied. According to the composition of GaInP. With the change of growth temperature, better quality short-wavelength Ga0.65In0.35P materials were grown.