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对硅片表面氧化层错形成机理进行了探讨。并通过中子辐照在直拉硅中引入缺陷，利用辐照缺陷和硅中氧的相互作用，强烈抑制硅片表面氧化层错的产生。
The formation mechanism of oxide layer on the surface of silicon wafer was discussed. In addition, defects were introduced into Czochralski silicon by neutron irradiation. By utilizing the interaction between irradiation defects and oxygen in silicon, the formation of oxide layer on wafer surface was strongly inhibited.