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用射频磁控溅射法在Si(100)衬底上生长了一组Zn1-xMgxO(x=0~0.16)薄膜。并在不同温度下退火。对薄膜的光致发光研究表明,在薄膜的发射谱的紫外区域有分别对应自由激子(以及相应的声子伴线)和电子-空穴等离子体的发光机制,其中后者有5倍超线性的受激发射,其受激发射阈值与薄膜的退火温度相关,样品中最低受激阈值为40kW/cm2。
A group of Zn1-xMgxO (x = 0 ~ 0.16) thin films were grown on Si (100) substrate by RF magnetron sputtering. And annealed at different temperatures. Photoluminescence studies of the films show that there are luminescence mechanisms in the UV region of the emission spectrum of the film corresponding to free excitons (and corresponding phonon pairs) and electron-hole plasmas, respectively, of which the latter has a 5-fold In the case of linear stimulated emission, the stimulated emission threshold is related to the annealing temperature of the thin film. The lowest stimulated threshold in the sample is 40 kW / cm2.