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本文报道了分子束外延生长的应变层超晶格Zn0.77Cd0.23Se/ZnSe和ZnSe/ZnS0.12Se0.88的光致发光谱.分析了影响激子线型展宽的主要因素.定量表征了4.4K下合金涨落和阱厚涨落对线型展宽的贡献.理论分析表明,在低温(4.4K)下,合金涨落和阱宽涨落对线型展宽起主导作用.对比结果显示,Zn0.77Cd0.23Se/ZnSe超晶格的合金涨落和阱宽涨落对线型展宽的贡献大于ZnSe/ZnS0.12Se0.88超晶格
In this paper, the photoluminescence spectra of strained layer superlattices Zn0.77Cd0.23Se / ZnSe and ZnSe / ZnS0.12Se0.88 grown by molecular beam epitaxy are reported. The main factors affecting exciton broadening are analyzed. Quantitative characterization of 4.4K alloy fluctuation and well thickness fluctuation contribution to the linear expansion. Theoretical analysis shows that at low temperature (4.4K), the fluctuations of the alloy and the width of the well dominates the linear spread. The comparison results show that the contribution of the fluctuation of the fluctuation of the alloy and the well width of the Zn0.77Cd0.23Se / ZnSe superlattice to the linear expansion is larger than that of the ZnSe / ZnS0.12Se0.88 superlattice