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用直流反应磁控溅射方法在透明平面玻璃上制备出Al掺杂ZnO薄膜,并对其结构和温差电动势率进行研究。实验结果表明,所制备样品具有C轴择优取向的多晶结构,温差电动势随着温差(ΔT)的增大而呈线性增加。并且样品的电阻越大,温差电动势率越小。在室温附近的环境温度对温差电动势率几乎无影响。退火处理后,温差电动势率增大。实验还发现,在外加磁场时,温差电动势率稍微减小。
Al - doped ZnO thin films were prepared on transparent glass by direct current reactive magnetron sputtering and the structure and the temperature difference electromotive force were studied. The experimental results show that the prepared samples have a polycrystalline structure with a preferred C-axis orientation and the temperature difference emf increases linearly with increasing temperature (ΔT). And the greater the resistance of the sample, the smaller the temperature difference emf. The ambient temperature near room temperature has almost no effect on the temperature difference emf. After annealing, the temperature difference electromotive force increases. Experiments also found that, in the external magnetic field, the temperature difference between the EMF slightly reduced.