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为了进一步减小栅漏电,提高击穿电压,将MOS结构的优点引入ALGaN/GaNHEMT器件中,研制并分析了新型的基于AlGaN/GaN的MOS-HFET结构。采用等离子增强气相化学沉积(PECVD)的方法生长了50nm的SiO2作为栅绝缘层,新型的AlGaN/GaNMOS-HFET器件栅长1μm,栅宽80μm,测得最大饱和输出电流为784mA/mm,最大跨导为44.25ms/mm,最高栅偏压+6V。
In order to further reduce gate leakage and increase breakdown voltage, the advantages of MOS structure are introduced into ALGaN / GaNHEMT devices, and a new type of AlGaN / GaN based MOS-HFET structure is developed and analyzed. A 50nm SiO 2 gate insulator was grown by plasma-enhanced chemical vapor deposition (PECVD). The gate length of the new AlGaN / GaNMOS-HFET was 1μm and the gate width was 80μm. The maximum saturation current was measured at 784mA / mm. Guide 44.25ms / mm, the highest gate bias +6 V.