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A chemical mechanical polishing(CMP) process was selected to smooth Ti O2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in Ti O2 thin film CMP. The effects of silica sols concentration, slurry p H, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness(1.26 , the scanned area was 10 10 m2/ and higher polishing rate(65.6 nm/min), the optimal parameters were:silica sols concentration 8.0%, p H value 9.0, active agent concentration 50 m L/L, chelating agent concentration10 m L/L, respectively.
A chemical mechanical polishing (CMP) process was selected to smooth Ti O2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in Ti O2 thin film CMP. The effects of silica sols concentration, slurry p H, chelating The experimental results indicated that we got the lower surface roughness (1.26 , the scanned area was 10 10 m2 / and higher polishing rate (65.6 nm / min), the optimal parameters were: 8.0% for silica sols concentration, 9.0 for pH value, 50 mL / L for active agent concentration and 10 mL / L for chelating agent concentration.