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研究了C波段大功率砷化镓场效应晶体管的宽带内匹配技术,结果在电路设计中采用了新型的电路结构和大信号特性。在高介电常数的单瓷片上形成集总参数元件二级输入网络。在氧化铝陶瓷片上,以微带结构形成半分布参数的单级输出电路。总栅宽为11200微米的内匹配砷化镓场效应晶体管在1分贝增益压缩下具有2.5瓦的功率输出,在没有外部匹配的情况下,从4.2到7.2千兆赫,该器件具有5.5分贝的线性增益和4.4瓦的饱和功率输出。从4.5到6.5千兆赫,这种内匹配场效应晶体管具有6分贝线性增益和5瓦的饱和输出功率。
The broadband in-band matching technology of C-band high power gallium arsenide field-effect transistor is studied. The result shows that the new circuit structure and large signal characteristics are adopted in the circuit design. A lumped parameter element secondary input network is formed on a single high dielectric constant ceramic. On the alumina ceramic sheet, a single-stage output circuit with a semi-distributed parameter is formed in a microstrip structure. An internally matched Gallium Arsenide Field Effect Transistor with a total gate width of 11200 micrometers has a 2.5 Watt power output at 1 dB gain compression, with 4.2 to 7.2 GHz in the absence of external matching, and the device has a 5.5 dB linearity Gain and 4.4 watts of saturated power output. From 4.5 to 6.5 GHz, this internally matched field-effect transistor has a 6 dB linear gain and a 5-watt saturated output power.