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采用低能离子注入法在Si材料上制作了浅结结构紫外光 (UV )探测器 ,介绍了探测器的结构设计、工艺制作以及主要测量结果。实验证明 ,这种探测器能够有效地探测波长为 2 0 0nm至 4 0 0nm的紫外光。
The low-energy ion implantation method was used to fabricate a shallow-junction UV detector on the Si material. The structure design, fabrication process and main measurement results of the detector were introduced. Experiments show that this detector can effectively detect the wavelength of 200nm to 4000nm UV light.