论文部分内容阅读
在典型的热丝化学气相沉积（HF-CVD）设备中利用辉光放电等离子体实现了镜面抛光的单晶硅（100）基底上金刚石高密度异质外延形核．实验中以硅基底作为阴极，其表面的放电电流密度高达80mA／cm2。利用原子力显微镜（AFM）、扫描电子显微镜（SEM）、俄歇电子谱（AES）等测试手段对所得样品进行了分析。结果发现，经过10min的生长之后，在硅（100）表面上实现了金刚石（D）均匀外延形核，取向关系为D（110）／／Si（110）及D（100）／／Si（100），形核密度高达5x109／cm2。根据放电参数对阴极鞘层的等离子体参数的计算结果与AMF及SEM分析一致，表明了阴极鞘层对于金刚石异质外延形核具有决定作用，并据此讨论了进一步改善异质外延形核均匀性的途径。
In a typical hot filament chemical vapor deposition (HF-CVD) apparatus, a mirror-polished diamond high density heteroepitaxial nucleation on a single crystal silicon (100) substrate was achieved using glow discharge plasma. In the experiment, a silicon substrate was used as the cathode, and the discharge current density of the surface was as high as 80 mA / cm2. The obtained samples were analyzed by atomic force microscopy (AFM), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). The results showed that after 10 min of growth, uniform epitaxial nucleation of diamond (D) was achieved on the surface of silicon (100). The orientation relationship was D (110) // Si (110) and D ), Nucleation density of up to 5x109 / cm2. The calculated plasma parameters of the cathode sheath according to the discharge parameters are consistent with the AMF and SEM analysis, indicating that the cathode sheath plays a decisive role in the heterogeneous nucleation of diamond. Based on this, the further improvement of heterogeneous nucleation Sexual ways.