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The luminescence intensity regulation of organic light-emitting transistor (OLED) device can be achieved effectively by the combination of graphene vertical field effect transistor (GVFET) and OLED. In this paper, we fabricate and charac-terize the graphene vertical field-effect transistor with gate dielectric of ion-gel film, confirming that its current switching ratio reaches up to 102. Because of the property of high light transmittance in ion-gel film, the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties. We also prepare the graphene vertical organic light-emitting field effect transistor (GVOLEFET) by the combination of GVFET and graphene OLED, analyzing its elec-trical and optical properties, and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.