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采用脉冲激光沉积技术在(0001)取向的GaN基片上以TiO2为缓冲层外延生长了PZT(111)单晶薄膜。X射线衍射分析表明PZT(111)衍射峰的摇摆曲线半高宽为0.4°,说明薄膜结晶性能良好。PZT薄膜疲劳特性测试结果表明,在经过107次翻转后PZT薄膜的剩余极化强度开始出现下降。P-E电滞回线和I-V测试表明PZT薄膜矫顽场(2Ec)为350 kV/cm,剩余极化(2Pr)约为96μC/cm2,在1 V电压下薄膜的漏电流密度为1.5×10-7A/cm2。以上性能测试结果表明,在半导体GaN上外延生长的PZT铁电薄膜性能基本满足铁电随机存储器的需要。
PZT (111) single crystal thin films were epitaxially grown on (0001) oriented GaN substrates by using pulsed laser deposition with TiO2 as buffer layer. X-ray diffraction analysis showed that the FWHM of the rocking curve of the PZT (111) diffraction peak was 0.4 °, indicating that the film has good crystallinity. The test results of the fatigue properties of PZT films show that the remanent polarization of PZT films begins to decline after 107 reversals. The PE hysteresis loop and IV tests show that the coercive field (2Ec) of PZT film is 350 kV / cm and the residual polarization (2Pr) is about 96μC / cm2. The leakage current density of the film is 1.5 × 10- 7A / cm2. The above performance test results show that the epitaxial growth of PZT ferroelectric thin film on semiconductor GaN basically meet the needs of ferroelectric random access memory.