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本文介绍利用异质结注入和GaAs中电子弹道运动的AlGaAs/GaAs异质结弹道双极晶体管(简称BBT)的理论和设计。指出并讨论了成功地实现这种新型特高频(EHF)三端固体器件的主要因素。我们首次提出,发射结的理想结构要有适当的铝浓度及适当的掺杂剖面分布,并且首次提出“倒置”异质结双极器件的结构。所提出的倒置BBT结构的优点是减小基极电流和减小具有重大影响的发射极-基极电容。这种新型器件的性能使三端固体器件成为首先实现特高频范围(60GHz以上)放大和GaAs千兆赫比特逻辑组件方面十分引人注意的候选者。我们相信,BBT在模拟和数数字MMIC、M~3IC方面应用是一种有极大希望的新型三端器件。
This article presents the theory and design of AlGaAs / GaAs heteroscaled ballistic bipolar transistors (BBTs) that utilize the injection of heterojunction and electron trajectories in GaAs. Pointed out and discussed the main factors for successfully implementing the new EHF three-terminal solid state device. We first proposed that the ideal structure of the emitter junction should have appropriate aluminum concentration and proper doping profile distribution, and the structure of the “inverted” heterojunction bipolar device is first proposed. The advantages of the proposed inverted BBT structure are to reduce the base current and to reduce the emitter-base capacitance that has a significant effect. The performance of this new device has made three-terminal solid state devices a compelling candidate for the first logic components to be amplified in the ultra high frequency range (60 GHz and above) and GaAs gigahertz. We believe BBT is a promising new three-terminal device for analog and digital digital MMIC, M ~ 3IC applications.