In this paper,a 2-mm long on-chip dipole antenna pair on silicon substrate is simulated to investigate the transmission characteristics.A novel technique is proposed by employing a 0.35-mm thick diamond layer between silicon substrate and heat sink to improve antenna performance.The simulated transmission gain of this antenna pair with 1 mm separation on a 10-Ω cm silicon substrate increases by 9 dB at 20 GHz.A modified plane wave model involving diamond layer is also presented to explain gain improvement.Effects of dielectric variety,diamond thickness,substrate resistivity and antenna pair separation on transmission gain have been studied.The results indicate that thinner diamond layer along with high resistivity substrate is preferred.Our method makes integrated dipole antennas well suitable for intra-chip wireless interconnection which is known as a future solution to replace critical wiring interconnection. In this paper, a 2-mm long on-chip dipole antenna pair on silicon substrate is simulated to investigate the transmission characteristics. A novel technique is proposed by employing a 0.35-mm thick diamond layer between silicon substrate and heat sink to improve antenna performance The simulated transmission gain of this antenna pair with 1 mm separation on a 10-Ω cm silicon substrate increases by 9 dB at 20 GHz. A modified plane wave model involving diamond layer is also presented to explain gain improvement. Effects of dielectric variety, diamond thickness, substrate resistivity and antenna pair separation on transmission gain have been studied. The results indicate that thinner diamond layer along with high resistivity substrate is preferred. Our method makes integrated dipole antennas well suitable for intra-chip wireless interconnection which is known as a future solution to replace critical wiring interconnection