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用化学蒸汽输运法(VT),以碘为输运剂,在封闭的生长安瓶内,生长温度900℃,蒸发源与生长中的晶体间温差(△T)为5—6℃,在园锥形安瓶顶端以取向的单晶作子晶,可以生长成完整的ZnS单晶。在大管径的安瓶中对流控制的质量输运可以快速长成具有大晶面,中间有空隙的梨晶。用控制对流并适当降低△T值在低蒸气过饱和下可以生出1厘米~3以上量级无孪生的单晶。ZnS单晶为立方结构,位错密度10~4·cm~(-2)n型导电,电阻率8×101~2Ω·cm。晶体具有蓝色CRL、PL及EL,用掺有锰的多晶在同样条件下可以生长出ZnS:Mn~(2+)单晶。
The chemical vapor transport method (VT), iodine as transport agent, in a closed growth ampoule, the growth temperature of 900 ° C, evaporation source and the growth of the crystal temperature difference (△ T) 5-6 ℃, in the The conical ampoule at the top of the park is orientated as a monocrystalline crystal and grows into a complete ZnS single crystal. In the large diameter bottles of convection control of the quality of transport can be quickly grown into a large crystal face, the middle of the gap between the pearls. With the control of convection and appropriate to reduce △ T value in the low vapor supersaturation can produce 1 cm to 3 orders of magnitude more than twin monocrystals. ZnS single crystal cubic structure, dislocation density of 10 ~ 4 · cm ~ (-2) n-type conductivity, resistivity of 8 × 101 ~ 2Ω · cm. The crystals have blue CRL, PL and EL. ZnS: Mn ~ (2 +) single crystals can be grown under the same conditions with manganese-doped polycrystalline.