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高速光开关是实现光传输路径变换的关键器件之一.对于目前马赫-曾德型光开关本身占据的尺寸较大或者在一维方向上尺度较长的缺点,提出了一种利于高度集成的矩形马赫-曾德2×2光开关单元结构.器件由基于受抑全内反射原理的沟槽型微纳分光/合光器和90°弯曲波导的L型参考/相移臂两者构成,极大地减小了由此构成的马赫-曾德光开关器件的尺寸.利用硅的热光效应,举例设计了开关器件的L型相移臂上升50℃实现π相移时需要的总长度约为84μm.同时采用有限元法分析得到在NiCr金属电极加热器上施加电压3.5V时,可以使相移臂内的脊波导层上升温度约为50℃;模拟了介质覆盖上包层不同SiO2厚度时的时间响应特性,选用上包层SiO2厚度为0.5μm时得到器件上升时间35μs、下降时间48μs的开关速度.最后使用Rsoft FullWAVE软件模块时域有限差分法仿真验证了热光开关器件的开关功能.设计的硅基矩形结构马赫-曾德2×2热光开关的平面尺寸为56×38μm2.器件具有高效紧凑的特点,使其布局配置易于向二维方向扩展,并潜在应用于硅基高密度光子集成回路及片上光互连系统.
High-speed optical switch is one of the key devices to realize the optical transmission path transformation.For the shortcomings that the Mach-Zehnder optical switch itself occupies a large size or has a long dimension in one-dimensional direction, a high integration Rectangular Mach-Zehnder 2 × 2 optical switch cell structure The device consists of a groove-type micro-nano-splitter / combiner based on frustrated total internal reflection and an L-shaped reference / phase-shift arm of a 90 ° bent waveguide, The size of the Mach-Zehnder optical switching device thus formed is greatly reduced.Using the thermo-optic effect of silicon, the total length required for the π-phase shift of the L-type phase-shift arm of the switching device is designed to be about 84 μm At the same time, the temperature rise of the ridge waveguide layer in the phase-shift arm is estimated to be about 50 ℃ when the applied voltage is 3.5V on the NiCr metal electrode heater by the finite element analysis method. Time response characteristics, the choice of the upper cladding SiO2 thickness of 0.5μm when the device rise time 35μs, the fall time of 48μs switching speed.Finally, using Rsoft FullWAVE software module finite-difference time-domain simulation to verify the thermal optical switching device Off function designed silicon-based rectangular structure Mach-Zehnder 2 × 2 thermo-optic switch plane size of 56 × 38μm2 devices with high efficiency and compact features make it easy to expand the layout of the two-dimensional direction of the configuration and potential application of silicon High-density photonic integrated circuits and on-chip optical interconnect system.