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本文采用氩离子刻蚀法，将ＳｉＯｘＮｙ膜减薄成不同厚度的样片，并制成Ａｌ－ＳｉＯｘＮｙ－Ｓｉ系统的ＭＩＳ电容器。利用平带电压随膜厚度变化的关系和最小二乘法，测定有效功函数差和Ｓｉ－ＳｉＯｘＮｙ系统的固定电荷密度。结果表明，该系统的平带电压值明显高于Ａｌ－ＳｉＯ２－Ｓｉ系统的值，原因是固定电荷密度增大、有效功函数差减小和相对介电常数增大的综合结果。有效功函数差的减小与Ｓｉ－ＳｉＯｘＮｙ界面态密度的增大有关。
In this paper, argon ion etching method, the SiOxNy film reduced to different thickness of the sample, and made of Al-SiOxNy-Si MIS capacitors. The effective work function difference and the fixed charge density of Si-SiOxNy system were determined by using the relationship between flat-band voltage and film thickness variation and the least square method. The results show that the system flat voltage value is significantly higher than the value of Al-SiO2-Si system, due to the fixed charge density increases, the effective work function difference decreases and the relative dielectric constant increases. The decrease of the effective work function difference is related to the increase of the Si-SiOxNy interface state density.