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用扫描隧道显微表征了多孔硅的表面结构．发现它的Ｈａｕｓｄｏｒｆｆ维数Ｄ的值为１．８８，与逾渗模型的值相等．
The surface structure of porous silicon was characterized by scanning tunneling microscopy. It is found that Hausdorff dimension D has a value of 1.88, which is equal to the value of the percolation model.