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With spin-polarized-dependent band gap renormahzation effect taken into account,the energy-dependent evolution of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 10 K.We consider the exciting light with right-handed circular polarization,and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of |1/2> and |-1/2> spin conduction bands.At room temperature,the degree of electron spin polarization decreases sharply from 1 near the bottom of the conduction band,and then increases to a stable value above the quasi-Fermi level of the |—1/2> band.The greater the quasi-Fermi level is,the higher the degree of electron spin polarization with excessive energy above the quasi-Fermi level of the |-1/2> band can be achieved.At low temperature,the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band,and then increases with the excessive energy,and in particular,up to a maximum of 1 above the quasi-Fermi level of the |1/2> band.
With spin-polarized-dependent bandgap renorization reaction taken into account, the energy-dependent evolution of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 10 K. We consider the exciting light with right-handed circular polarization , and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of | 1/2> and | -1/2> spin conduction bands.At room temperature, the degree of electron depolarization sharply from 1 near the bottom of the conduction band, and then increases to a stable value above the quasi-Fermi level of the | -1/2> band. the greater the quasi-Fermi level is, the higher the degree of electron spin polarization with excessive energy above the quasi-Fermi level of the | -1/2> band can be achieved. At low temperature, the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band, and then increases with the excessi ve energy, and in particular, up to a maximum of 1 above the quasi-Fermi level of the | 1/2> band.