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ZnSe基材料是研制蓝绿色发光器件的首选材料之一。本文报道一种自己研制的、以石英管为主体结构材料的、可适用于ZnSe基材料分子束外延掺杂的简易等离子体活性氛源。该氛源采用射频激励方式激活氮分子。在适当生长条件下，利用装备有该氮源的国产FW－Ⅲ型分子束外延设备，成功地生长出了p型ZnSe优质单晶薄膜。SIMS测量表明，薄膜中氮浓度高达～2．3×1020cm－3；C-V测量表明，净空穴浓度［Na］－［Nd］为～5×1017cm-3，已经达到制备原理性蓝绿色激光二极管的要求（～4．0×1017cm-3）。
ZnSe-based materials are one of the materials of choice for the development of blue-green light-emitting devices. In this paper, we report a simple plasma active atmosphere that has been developed by ourselves, which is mainly composed of quartz tube and can be applied to the molecular beam epitaxial doping of ZnSe-based materials. The atmosphere uses radio frequency excitation to activate nitrogen molecules. Under proper growth conditions, a p-type ZnSe high-quality single-crystal thin film was successfully grown by using the domestic FW-Ⅲ molecular beam epitaxy equipment equipped with the nitrogen source. The SIMS measurements showed that the concentration of nitrogen in the thin film was as high as ~ 2.3 × 10 20 cm -3. The CV measurements showed that the [NC] of the vacancies was ~ 5 × 10 17 cm -3. Requires (~ 4.0 × 10 17 cm -3).