多次透射反射红外光谱法灵敏和准确地测量单晶硅中间隙氧和代位碳的含量(英文)

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建立了室温下使用多次透射反射红外光谱法(MTR-IR)测量单晶硅中间隙氧和代位碳含量的新红外光谱吸收方法,在理论和实验上证明了MTR-IR优于常规使用的单次垂直透射红外(IR)吸收测量方法。与IR法相比较,MTR-IR法的优点为:(1)间隙氧在1 107 cm-1处和代位碳在605 cm-1处的吸收峰与MTR-IR法中红外光透过硅片的的次数N(6~12)成线性增加的正比例关系,因此单晶硅中间隙氧和代位碳含量的检测限至少比IR法低一个数量级;(2)MTR-IR法测量薄硅片如0.2 mm的厚度时产生的干涉条纹强度是单次垂直透射红外吸收法(IR)的1/23、是单次Brewster角透射红外吸收法的1/11;(3)单次垂直透射红外吸收法(IR)1次只测量样品上的1个点,MTR-IR法则在更长的样品上1次测量多个样品点,每次测量更具有代表性。理论计算和实验结果都证实了MTR-IR吸收法测量晶体硅中间隙氧和代位碳杂质含量的高灵敏度、可靠性和重复性。 A new infrared absorption spectroscopy method for the determination of interstitial oxygen and substitutional carbon content in monocrystalline silicon at room temperature by using multiple transmission and reflection infrared spectroscopy (MTR-IR) was established. It was proved theoretically and experimentally that MTR-IR was superior to conventional Single vertical transmission infrared (IR) absorption measurement method. Compared with the IR method, the advantages of the MTR-IR method are as follows: (1) The absorption peak of interstitial oxygen at 1 107 cm-1 and the substitutional carbon at 605 cm-1 is similar to that of MTR-IR method (6-12) linearly proportional to the increase in the proportion of single-crystal silicon in the interstitial oxygen and substituting carbon detection limit at least one order of magnitude lower than the IR method; (2) MTR-IR method for measuring thin silicon films such as 0.2 The intensity of the interference fringes produced when the thickness is mm is 1/23 of a single vertical transmission infrared absorption method (IR), which is 1/11 of a single Brewster angle transmission infrared absorption method; (3) Single vertical transmission infrared absorption method IR) measures only one spot on a sample at a time. The MTR-IR method measures multiple sample spots on a longer sample, each time more representative. Both theoretical calculation and experimental results confirm the high sensitivity, reliability and repeatability of the MTR-IR absorption method for measuring the interstitial oxygen and substitutional carbon impurities in crystalline silicon.
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