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为了研究氧气与氩气的比例和溅射气压对Zn O薄膜的微观结构及光电特性的影响,在氧化铟锡(ITO)玻璃上采用射频感应耦合离子源增强磁控溅射方法镀上具有一定c轴择优取向的Zn O薄膜,用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针测试仪、紫外可见分光光度计表征薄膜微观结构与光电特性。结果表明随着氧分压的增加,薄膜表面的平整度先增加后减小,沿(002)方向生长的Zn O薄膜结晶度、晶粒尺寸先增加后减小,方阻先减小后增大,晶粒尺寸、方阻等值在O2和Ar的体积流量比为15∶60时达到极值。实验中改变溅射时的气压值,发现较大的溅射气压有利于磁控溅射的进行,有利于获得纯净的Zn O薄膜,在可见光范围内有的样品平均透过率超过90%。
In order to study the influence of the ratio of oxygen and argon and the sputtering pressure on the microstructure and photoelectric properties of ZnO thin films, RF induction coupled ion source (ICP) c-axis preferred orientation of Zn O thin film, characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), four probe tester, UV-Vis spectrophotometer characterization of the film microstructure and photoelectric properties. The results show that with the increase of oxygen partial pressure, the flatness of the film surface first increases and then decreases. The crystallinity and grain size of the ZnO films grown along the (002) direction first increase and then decrease, the square resistance decreases first and then increases Large, grain size, square resistance equivalent value reached the extreme value when the volume flow ratio of O2 and Ar is 15:60. In the experiment, the pressure value of sputtering was changed. It was found that the larger sputtering pressure was beneficial to the magnetron sputtering and the pure Zn O film was obtained. The average transmittance of some samples in the visible range exceeded 90%.