利用原子力显微镜(AFM)探针直写技术制备了短沟道并五苯有机场效应晶体管(OFET),并研究了器件性能。在SiO2/n+-Si基底上,利用AFM探针刻蚀金沟道,通过优化工艺参数,获得的沟道长约1μm,器件的场效应迁移率为0.038cm2.V-1.S-1,开关比为103,输出电流最高可达200μA。结果表明,器件性能强烈依赖于沟道长度,随着沟道长度减小,输出电流显著增加。 Short-channel pentacene organic field-effect transistors (OFETs) were fabricated by atomic force microscopy (AFM) probe direct writing technology. The device performance was also investigated. The Au channel was etched by AFM probe on SiO2 / n + -Si substrate. The optimized channel length was about 1μm. The field-effect mobility of the device was 0.038cm2.V-1.S-1, Switching ratio of 103, the output current up to 200μA. The results show that the device performance strongly depends on the channel length, with the channel length decreases, the output current increases significantly.