引言ISFET 具有重量轻、体积小、响应快以及易于实现集成化和多功能化等特点,倍受人们的重视;但是这类器件至少在现阶段还存在着时漂、温漂和滞后量大等不足,影响了测量精度。如按 Nernst 公式估算,对于一价离子,每1mV 的测量偏差相当于0.04的浓度误差或0.02pX 误差(pX=-log ax)。检测 H~+的 pH—ISFET,其时漂在0.1mV/hr 至几mV/hr 范围,温漂约为几mV/℃。此外,器件对于过去的测量经历还存在着明显的记忆效 INTRODUCTION ISFETs are attractive to people due to their light weight, small size, fast response, and ease of integration and versatility; however, such devices have drift, drift and hysteresis at least at this stage Insufficient, affecting the measurement accuracy. As estimated by Nernst’s formula, the measurement deviation per 1 mV corresponds to a concentration error of 0.04 or a 0.02 pX error (pX = -log ax) for monovalent ions. H ~ + pH-ISFETs were tested for drift at 0.1 mV / hr to a few mV / hr with a temperature drift of about a few mV / ° C. In addition, the device has a significant memory effect on past measurement experiences