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介绍了一种用于高品质射频集成电感的厚膜多孔硅背向生长技术。ASITIC模拟证明厚膜多孔硅衬底能够显著提高射频集成电感的性能。采用背向生长技术成功地制备出了厚膜多孔硅包括穿透整个硅片的多孔硅,并证实了该技术作为后处理工艺应用于CMOS技术的可行性。ESEM对所制样品的表面和截面形貌进行了分析。通过多组实验,得出了多孔硅生长速度与腐蚀电流密度的准线性关系。
A thick-film, porous silicon back-grown technology for high-quality RF integrated inductors is presented. ASITIC simulations demonstrate that thick-film porous silicon substrates can significantly improve the performance of RF integrated inductors. The successful application of back-grown technology to the production of thick-film porous silicon, including porous silicon through the entire silicon wafer, confirmed the feasibility of this technology as a post-processing technology for CMOS technology. The surface and cross-sectional morphology of the samples were analyzed by ESEM. Through several experiments, the quasi-linear relationship between the growth rate of porous silicon and the corrosion current density was obtained.