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基于0.18μm CMOS工艺,设计了一种面向低速率低功耗应用的2.4GHz射频前端电路,包含2个单刀双掷开关、1个功率放大器和1个低噪声放大器。采用栅衬浮动电压偏置技术对传统单刀双掷开关进行了改进,以提高其线性度;功率放大器采用两级放大结构,对全集成的低噪声放大器进行了噪声优化;集成了输入输出匹配网络,采用了到地电感,以提高输入输出端的ESD性能。在接收模式时,电路的静态电流为10.7mA,增益为11.7dB,IIP3为2.1dBm,噪声系数为3.4dB。在发射模式时,电路的静态电流为17.4mA,功率增益为17.7dB,输出P1dB为20dBm,饱和功率为21.4dBm,最大PAE为23.8%,在输出功率为20dBm时的频谱满足802.15.4协议要求。
Based on a 0.18μm CMOS process, a 2.4GHz RF front-end circuit designed for low-rate, low-power applications is designed with two single-pole double-throw switches, a power amplifier and a low-noise amplifier. The traditional single-pole double-throw switch is improved by using the gate-lining floating voltage bias technique to improve its linearity. The power amplifier adopts two-stage amplification structure to optimize the noise of the fully integrated low-noise amplifier. The integrated input-output matching network , Using a ground-to-inductor to improve the ESD performance of the input and output. In receive mode, the quiescent current of the circuit is 10.7mA, the gain is 11.7dB, the IIP3 is 2.1dBm and the noise figure is 3.4dB. In transmit mode, the quiescent current of the circuit is 17.4mA, the power gain is 17.7dB, the output P1dB is 20dBm, the saturation power is 21.4dBm, the maximum PAE is 23.8% and the spectrum at 20dBm output power meets the 802.15.4 protocol requirements .