采用射频磁控溅射技术在Sr Ti O_3(100)衬底上制备Fe_(81)Ga_(19)薄膜。利用XRD、AFM和VSM表征了Fe_(81)Ga_(19)薄膜的生长取向、内应力、表面形貌和磁性,研究了不同溅射功率(60~100 W)对Fe_(81)Ga_(19)薄膜结构和磁性能的影响。结果表明,所有薄膜主要以A_2相和L1_2相存在。随着溅射功率的增大,A_2相衍射峰的强度缓慢降低,内应力显著增加,表面粗糙度降低,薄膜的剩余磁化强度和饱和磁化强度明显减小,而矫顽力保持不变,都为50 Oe。 Fe 81 Ga 19 thin films were prepared on Sr Ti O 3 (100) substrates by RF magnetron sputtering. The growth orientation, internal stress, surface morphology and magnetic properties of Fe 81 Ga 19 thin films were characterized by XRD, AFM and VSM. The effects of sputtering powers (60-100 W) ) Film structure and magnetic properties. The results show that all the films mainly exist as A_2 phase and L1_2 phase. With the increase of sputtering power, the intensity of diffraction peak of A_2 phase decreased slowly, the internal stress increased significantly, the surface roughness decreased, the remanent magnetization and saturation magnetization decreased obviously, while the coercive force remained unchanged 50 Oe.