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SOI(SiliconOnInsulator)器件中氧化埋层的隔离作用带来的浮体效应,将显著地影响器件的性能。本文阐述了浮体效应产生的原因以及它对SOI器件和电路的影响,并从体接触和工艺角度两个方面介绍了目前国际上比较优异的抑制浮体效应的几种典型器件结构。
The floating body effect caused by the isolation of the oxide buried layer in the SOI (SiliconOnInsulator) device will significantly affect the performance of the device. This article describes the causes of the floating body effect and its effects on SOI devices and circuits. Several typical device structures that inhibit the floating body effect internationally are introduced from two aspects of body contact and process.