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在n型Si衬底上用热丝化学气相沉积方法制备了多晶金刚石膜,用200keV的离子注入机在金刚石膜中进行了二次硼离子注入,第一次注入能量为70keV,第二次注入能量为120keV,获得了硼离子的均匀分布,测试了样品的I-V特性,发现其具有明显的pn异质结效应.
A polycrystalline diamond film was prepared on a n-type Si substrate by a hot filament chemical vapor deposition method and a second boron ion implantation was performed in a diamond film using a 200 keV ion implanter. The first implanted energy was 70 keV, the second An energy of 120 keV was injected into the plasma to obtain a uniform distribution of boron ions. The IV characteristics of the samples were tested and the pn heterojunction effect was observed.