【摘 要】
：
Nonpolar(11(2)0)plane InxGa1-xN epilayers comprising the entire In content(x)range were successfully grown on nanoscale GaN islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that
【机 构】
：
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic
论文部分内容阅读
Nonpolar(11(2)0)plane InxGa1-xN epilayers comprising the entire In content(x)range were successfully grown on nanoscale GaN islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33,even though the crystalline quality was gradually declined,which was accompanied by the appearance of phase separation in the InxGa1-xN layer.Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33.Furthermore,the corresponding average lifetime(τ1/e)of carriers for the nonpolar InGaN film was decreased from 406 ps to 267 ps,indicating that a high-speed modulation bandwidth can be expected for nonpolar InGaN-based light-emitting diodes.Moreover,the bowing coefficient(b)of the(11(2)0)plane InGaN was determined to be 1.91 eV for the bandgap energy as a function of x.
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