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采用基片架旋转的多靶磁控溅射仪，通过六方氮化硼（ｈ－ＢＮ）和Ｔｉ靶反应溅射制备Ｔｉ－Ｂ－Ｎ复合薄膜，并用ＡＥＳ、ＸＲＤ和ＴＥＭ等方法研究了薄膜的微结构．结果表明，室温下沉积薄膜均呈非晶态，经过４００°Ｃ热处理薄膜晶化．基片加热为４００°Ｃ沉积的薄膜则已晶化，ＴＥＭ分析确定薄膜结构为ＴｉＮ结构．显微硬度表征发现，室温沉积Ｔｉ与ｈ－ＢＮ的原子数约为２∶１时的薄膜达到最高硬度ＨＫ２６００．
Ti-B-N composite thin films were prepared by reactive sputtering of hexagonal boron nitride (h-BN) and Ti target with a multi-target magnetron sputtering instrument rotating by a substrate holder. The films were investigated by means of AES, XRD and TEM. Microstructure. The results show that the deposited films are amorphous at room temperature, and the films are crystallized after heat treatment at 400 ° C. The substrate was heated to 400 ° C deposition of the film has been crystallized, TEM analysis to determine the film structure of TiN structure. The microhardness characterization found that the film with the atomic number of Ti and h-BN of about 2:1 deposited at room temperature reached the highest hardness of HK2600.