论文部分内容阅读
为了解决拉曼激光器的非线性光学损耗严重以及输出效率偏低的问题,利用受激拉曼散射(SRS)的非线性频移机制,以Si元素作为拉曼激光器的增益介质设计了激光器的结构。根据硅元素波导理论,在拉曼激光器的波导结构中设计了一个反向偏置电压的p-i-n二极管,通过控制调节该反向电压值降低有效载流子寿命,从而降低由双光子吸收(TPA)引起的自由载流子吸收(FCA)以及由自由载流子吸收引起的非线性光学损耗。理论分析及实验结果表明:通过控制调节p-i-n反向偏置电压,自由载流子寿命从16 ns降低到1 ns,且输出功率在同等标准下得以显著提高,从而验证了该结构的可行性和优越性。
In order to solve the problem of serious nonlinear optical loss and low output efficiency of Raman lasers, the structure of the laser is designed by using the nonlinear frequency shift mechanism of stimulated Raman scattering (SRS) and using Si as the gain medium of Raman lasers . According to the silicon element waveguide theory, a reverse-biased pin diode is designed in the waveguide structure of the Raman laser. By controlling and adjusting the reverse voltage value, the effective carrier lifetime is reduced, thereby reducing the photon emission caused by two-photon absorption (TPA) Induced free carrier absorption (FCA) and nonlinear optical loss caused by free carrier absorption. The theoretical analysis and experimental results show that by controlling the pin reverse bias voltage, the free carrier lifetime can be reduced from 16 ns to 1 ns, and the output power can be significantly increased under the same standard. The feasibility of this structure is verified. Superiority.