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建立了适用于缓变 Alx Ga0 .5 2 -x In0 .48P/Ga As HBT的解析模型。考虑了 Al组分 x的变化对 HBT温度特性的影响。分析结果表明 ,在实用的电流范围 (Jc在 1 0 3 A/cm2 左右 )内 ,Alx Ga0 .5 2 -xIn0 .48P/Ga As HBT随着 x的增大 ,其电流增益的稳定性也上升 ,当 x=0 .3时工作温度可超过 70 0K。文章还分析了高温时 HBT电流增益下降的原因
An analytical model suitable for graded AlxGa0.52-x In0.48P / Ga As HBT has been established. The influence of the change of Al composition x on the temperature characteristics of HBT is considered. The results show that the current gain stability of AlxGa0.52-xIn0.48P / GaAs HBT increases with the increase of x in the practical current range (Jc is about 103 A / cm2) , When x = 0 .3 working temperature can exceed 70 0K. The article also analyzes the reasons for the drop in HBT current gain at high temperatures