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本文介绍了用阳极氧化和化学剥层技术测定硅中硼扩散杂质分布的方法．给出了几种不同扩散气氛下硼扩散杂质在硅中分布的实验曲线．并与高斯杂质分布函数做了比较．发现高斯理论杂质分布与实验结果有很大偏差．本文对产生这种偏差的物理机制做了较详细的讨论．
This article describes the use of anodic oxidation and chemical stripping technology for the determination of boron in boron diffusion impurity distribution method. The experimental curves of the distribution of boron-diffused impurities in silicon under different diffusion atmospheres are given. And compared with the Gaussian impurity distribution function. It is found that Gaussian theoretical impurity distribution is greatly deviated from experimental results. This article gives a more detailed discussion of the physical mechanism that produces this bias.