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本文利用渡越时间技术研究了热退火和光辐照对无定形Se_(93·5)As_(6·5)和Se_(94·3)Ge_(5·7)膜中空穴迁移率和电子迁移率的影响.经过热退火和光辐照处理后,电子迁移率及其激活能急剧增加,而空穴迁移率几乎保持不变.电子输送性能的变化是局部结构形变弛豫过程的结果,该弛豫过程与较浅的局域态有关.无定形硒化物中电子输运性能和Se_8环分子有关的假说与本实验结果相矛盾.
In this paper, we use time-of-flight techniques to study the effects of thermal annealing and light irradiation on the hole mobility and electron mobility in the amorphous Se 93.5 As 6 6.5 and Se 94.7 Ge 5-7 films. After the thermal annealing and light irradiation treatment, the electron mobility and its activation energy increased sharply, while the hole mobility remained almost unchanged.Electron transport properties change is the result of local structural deformation relaxation process, the relaxation The process is related to a shallow local state.The hypothesis that the electron transport properties of amorphous selenides are related to Se8 ring molecules contradicts the experimental results.