应用相移法测量半导体内非平衡载流子寿命是近年来采用较多的方法。当一矩形半导体样品受一调幅光j=j_0+j_0’sin(ωtf+Ψ)照射,且同时通以恒定电流时(图1),样品两端产生一交变电压v_~=-v_0’sin(ωt+Ψ-φ),其中落后的相角φ满足以下关系: Application of phase shift method to measure the semiconductor non-equilibrium carrier lifetime in recent years, more methods are used. When a rectangular semiconductor sample is irradiated by an amplitude modulated light j = j_0 + j_0’sin (ωtf + Ψ), and at the same time with a constant current (Figure 1), an alternating voltage v_ ~ = -v_0’sin (ωt + Ψ-φ), wherein the backward phase angle φ satisfies the following relationship: