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用液封方法从富镓熔液中拉制出了GaAs_(1-X)P_X晶体。对晶体的头部进行X射线分析和光学测量得出:X(?)0.3。在室温下,进行光学测量表明:晶体是n型的,载流子浓度N=～10~(17)cm~(-3),霍尔迁移率μ_H=～500cm~2V~(-1)。
GaAs_ (1-X) P_X crystals were drawn from the gallium-rich melt by a liquid-tight method. X-ray analysis and optical measurement of the crystal's head gave: X (?) 0.3. Optical measurements at room temperature showed that the crystal was n-type with a carrier concentration of N = ~ 10 ~ (17) cm ~ (-3) and Hall mobility of ~ 500 ~ 2V ~ (-1).