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本文探讨了在薄膜器件生产的尺寸大小和涂层方面比传统的紫外线接触式或接近式曝光的要求还高的光刻技术的优缺点,对其每一种光刻方法有一个简单的介绍,而读者可以参考本文所附的参考文献目录。在用于器件生产中,其分辨率和涂层显然比传统的接触式曝光好的方法,唯有扫描电子束光刻法,但它的缺点是成本高。虽说其它很多方法也具有分辨率高的特点,但还得与适当的对准技术结合起来。在生产实用的器件方面,其他方法尚未达到相当高的研制水平。X射线光刻技术具有极好的特性,即在非常薄的抗蚀剂层能保持图形原样。
This article explores the advantages and disadvantages of lithographic techniques that require higher dimensional and coating yields than conventional UV-contact or proximity exposures for thin-film devices and a brief introduction to each of these photolithographic methods. The reader can refer to the reference list attached to this article. The resolution and coating used in device production is clearly better than the traditional contact exposure method, only scanning electron beam lithography, but its disadvantage is the high cost. While many other methods also feature high resolution, they have to be combined with proper alignment techniques. Other methods have not yet reached a fairly high level of development in the production of practical devices. X-ray lithography has the outstanding feature of maintaining a graphical appearance on very thin resist layers.