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集成门极换流晶闸管(integrated gate commutated thyristor,IGCT)关断暂态时,其电流迅速由阴极换向到门极,且IGCT反并联二极管因承受正向偏压而导通,故IGCT关断暂态特性受其门极驱动关断电路及其反并联二极管运行特性影响。基于IGCT关断暂态换流机制及反并联二极管的工作原理,提出IGCT关断暂态时门极换流晶闸管(gate commutated thyristor,GCT)、驱动电路与反并联二极管所构成续流回路的等效电路,详细分析反并联二极管不同工况时等效电路结构及其运行特性的变化。结合IGCT关断暂态其端电压及等效电路各支路电流的实验结果,给出IGCT驱动关断电路及续流回路参数的提取方法。通过不同箝位电压与关断电流时实验结果与理论分析的对比,并考虑参数提取结果的一致性,充分证明等效电路与理论分析的正确性及参数提取方法的有效性。
When the integrated gate commutated thyristor (IGCT) turns off the transient, its current rapidly changes from the cathode to the gate, and the IGCT anti-parallel diode conducts due to the forward bias. Therefore, the IGCT is turned off Transient characteristics are affected by the operating characteristics of the gate drive shutdown circuit and its anti-parallel diodes. Based on the IGCT off-state transient commutation mechanism and the anti-parallel diode working principle, a gate commutated thyristor (GCT) with IGBT transient shut-off transient, a freewheeling circuit composed of driving circuit and anti-parallel diode, etc. Efficient circuit, a detailed analysis of anti-parallel diodes under different conditions equivalent circuit structure and operating characteristics of the changes. Combined with the experimental results of IGCT off-state transient voltage and the current of each branch of the equivalent circuit, the method of extracting the parameters of IGCT drive-off circuit and free-wheeling loop is given. Through the comparison of experimental results and theoretical analysis with different clamping voltage and shutdown current, and considering the consistency of parameter extraction results, the correctness of equivalent circuit and theoretical analysis and the validity of parameter extraction method are fully proved.