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介绍电致变色薄材料最佳掺杂含量的定量理论。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系 ,给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系 ,进而得到了一个最佳掺杂含量的表达式。分析三氧化钨电致变色薄膜材料的掺杂改性的实验结果 ,应用最佳掺杂含量表达式定量计算了三氧化钨以及三氧化钼电致变色薄膜材料的最佳掺杂含量 ,定量计算的结果与实验数据相符合。该理论方法也适用于其他材料最佳掺杂粒子数分数的理论计算。
The quantitative theory of the optimal doping content of electrochromic thin materials is introduced. The theory establishes the relationship between a certain physical property of electronic thin film material and its crystal structure, preparation method and dopant content, and presents a parabolic equation with definite physical meaning that can fit the experimental curve. The extreme point of the equation determines the quantitative relationship between the optimal doping content and the crystal structure and the preparation method, and then obtains the expression of the optimal doping content. The experimental results of the doping modification of the electrochromic thin film material of tungsten trioxide were analyzed. The optimal doping content of the electrochromic thin film material of tungsten trioxide and molybdenum trioxide was quantitatively calculated by using the optimal doping content expression, The results are consistent with the experimental data. The theoretical method is also applicable to the theoretical calculation of the optimal doping particle fraction for other materials.