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采用二维数值模拟方法详细分析了基区复合电流对 n Si/p Si1- x Gex/n Si应变基区异质结双极晶体管 ( HBT)共射极电流放大系数 β的影响 ,给出了 Si1- x Gex HBT的 Gummel图、平衡能带图 .得出在靠近发射结附近基区的复合电流是引起 β下降的主要因素 ,并给出了减小基区复合电流的 Ge分布形式 .
The effect of base recombination current on the amplification coefficient β of common-emitter current of n Si / p Si1-x Gex / n Si HBT transistor is analyzed in detail by two-dimensional numerical simulation method. The Gummel diagram of Si1-xGex HBT equilibrates the band diagram, and the conclusion is drawn that the composite current near the base of the emitter junction is the main factor causing the decrease of β, and the Ge distribution that reduces the recombination current in the base region is given.