在N型硅片上利用B_2O_3作杂质源扩散形成P—N结时,如果扩散温度高,扩散时间长,则硅表面上将生成一薄层蓝色或深褐色的表面膜,仅用氢氟酸并不能溶解掉这一薄膜。这种现象Yatsko曾比较详细地报导过,至于所生成的表面膜的机构,到目前为止尚不清楚。虽然这层表面膜可以用HF和HNO_3按一定比例配成的腐蚀液腐蚀掉,但 In the N-type silicon using B_2O_3 as an impurity source to form P-N junction diffusion, if the diffusion temperature is high, the diffusion time is long, the surface of the silicon will generate a thin blue or dark brown surface film, only the fluoride Acid does not dissolve the film. This phenomenon has been reported in more detail by Yatsko, and the body of the resulting surface film has not been known so far. Although this layer of surface film can be HF and HNO_3 corroded by a certain percentage of corrosion solution, but