Oxygen Incorporation in Czochralski Growth of Silicon under a Horizontal Magnetic Field

来源 :稀有金属：英文版 | 被引量 : 0次 | 上传用户：qiuyeshusheng

【摘要】

：

A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field(HMCZ)is proposed.Oxygen depleted surface melt,d

【作者】

：

Wang Tihu Li Yingchun Qin

【机构】

：

GeneralResearchInstfor

【出处】

：

稀有金属：英文版

【发表日期】

：

1990年1期

【关键词】

：

Oxygen CZOCHRALSKI ROTATION CORPORATION TRANSPORTATION satisfactory RADIAL deple

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A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field(HMCZ)is proposed.Oxygen depleted surface melt,driven to the growth interface by the thermal Marangoni flow.determines oxygenconcentration in t

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Oxygen Incorporation in Czochralski Growth of Silicon under a Horizontal Magnetic Field

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