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Fe3O4具有理论100%自旋极化率、高居里温度(858K),是能在室温下应用到自旋器件中的半金属材料。本研究采用对靶直流磁控溅射的方法制备了(100)MgO/Fe种子层,在此种子层上通过调节溅射工艺条件,得到了(100)晶向的Fe3O4薄膜。用XRD和TEM确认了反尖晶石相和(100)优先取向。采用VSM测试了样品的磁滞回线。结果表明,加入(100)MgO/Fe种子层后,Fe3O4薄膜的结构取向由随机排列转变到(100)优先取向,Fe3O4薄膜的磁性能发生了改变,具有了一定的垂直磁性能,AFM显示薄膜具有平整的平面,这利于通过加外加交换耦合薄膜来调节薄膜的磁性能,从而对自旋器件的应用有意义。
Fe3O4 has a theoretical 100% spin polarization and a high Curie temperature (858K), which is a semimetallic material that can be applied to spin devices at room temperature. In this study, a (100) MgO / Fe seed layer was prepared by direct current magnetron sputtering. The (100) orientation of Fe3O4 thin films was obtained by adjusting the sputtering conditions. Detritus phase and (100) preferential orientation were confirmed by XRD and TEM. The VSM was used to test the hysteresis loop of the sample. The results show that the structure orientation of the Fe3O4 thin films changes from random to (100) preferential orientation after the (100) MgO / Fe seed layer is added. The magnetic properties of the Fe3O4 thin films change with certain vertical magnetic properties. Has a flat planar surface, which facilitates adjusting the magnetic properties of the thin film by adding an exchange-coupled thin film, which makes sense for spin-on device applications.