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铟镓磷—砷化镓可以作为发光二极管的材料,其发光范围在可见光,能带间隙在300K时为2.2电子伏。我们利用液相外延法在砷化镓(100)表面上生长了铟镓磷外延层。在其它条件不变下,进行了不同过冷度的生长实验,并用扫描电镜S—450对界面形态进行了观测,用界面高点与低点之差作为对界面平整度的量度,可以得到界面平整度过冷度的大致关系为:只在一个很小的过冷度区间,才能生长出较为平整的界面。界面形态不平整,主要是因为在生长初期由于溶液中的饱和度不够有回溶现象发生,根据文献,溶液的饱和度与晶体生长速率有如下关系曲线:
Indium gallium phosphide - gallium arsenide can be used as a light-emitting diode material, the light-emitting range of visible light, band gap at 300K 2.2 electron volts. We have grown indium-gallium-phosphorus epitaxial layers on gallium arsenide (100) surfaces by liquid-phase epitaxy. Under the other conditions, different undercooling growth experiments were carried out. The morphology of the interface was observed by scanning electron microscope S-450. The difference between the high and low interface was taken as the measure of the flatness of the interface, and the interface The general degree of undercooling is as follows: A relatively flat interface can be grown only in a very small subcooling interval. Interface morphology is not flat, mainly because early in the growth due to insufficient saturation of the solution to the phenomenon of backwash, according to the literature, the solution saturation and the crystal growth rate has the following relationship curve: