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目前在单晶硅制备中,国外多采用纯氩气氛拉晶工艺(或在氩中掺1—5％的微量氢气)。氩气性能的稳定,不仅可以将炉中结晶潜热及时排出,造成炉内合理的温度梯度分布,有利于优质晶体的生长,而且也避免了用氢气拉晶所产生的氢脆及引入其他缺陷。 然而,电子工业需用的氩气要求纯度高,(>99.999％)并且消耗量大(20—22米~3
Currently in the preparation of monocrystalline silicon, pure argon argon crystal pulling process (or 1-5% trace amount of hydrogen in argon) is adopted abroad. The stable argon gas performance can not only promptly release the latent heat of crystallization in the furnace, which can result in a reasonable temperature gradient distribution in the furnace, which is favorable for the growth of high-quality crystals, but also avoids hydrogen embrittlement caused by hydrogen pulling crystal and introduces other defects. However, the argon used in the electronics industry requires high purity (> 99.999%) and high consumption (20-22 m 3