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借助RF-PECVD辅助RTP技术,采用高沉积气压的技术路线制备了优质的微晶硅薄膜,并利用拉曼光谱、反射谱和透射谱分别研究了微晶硅的晶化率和光学性质.实验中发现微晶硅的吸收边出现了相对红移,此相对红移可归结于薄膜晶化率的提高和带尾态密度的降低.
The high-quality microcrystalline silicon thin films were prepared by RF-PECVD assisted RTP technique and high deposition pressure. The crystallization rate and optical properties of microcrystalline silicon were investigated by Raman spectroscopy, reflection spectroscopy and transmission spectroscopy, respectively. In the absorption edge of microcrystalline silicon, a relative redshift appears, which is attributed to the increase of the crystallization rate and the decrease of the tail density.