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在电子倍增硅靶摄像管(SEM 管)中,制备光电阴极时碱金属蒸汽会对硅二极管阵列靶造成一定的污染。对污染问题进行了下述一些实验:(1)光电阴极制备对电阻海阻值的影响;(2)锑铯阴极与三碱阴极(S—20)的制备对 SEM 管污染的比较。实验结果证实:(1)碱金属蒸汽对碲化镉(CdTe)电阻海阻值未产生显著影响;(2)锑铯阴极比三碱阴极对 SEM管的污染小得多。为了解释实验中的一些现象,提出下述观点:电阻海 CdTe 对碱金属是一个阻挡层。依据这个观点做了一些理论推导及估算,初步解释了实验中出现的一些现象。
In the electron multiplying silicon target camera tube (SEM tube), the alkali metal vapor will cause some pollution to the silicon diode array target when preparing the photocathode. The following experiments were carried out on the pollution problems: (1) the influence of photocathode preparation on the resistance of the resistance; (2) the comparison of the SEM tube pollution on the preparation of the antimony cesium cathode and the trialkali cathode (S-20). The experimental results show that: (1) Alkali metal vapor has no significant effect on the resistance of CdTe; (2) The antimony cesium cathode has much less pollution to the SEM tube than the trialkali cathode. In order to explain some of the phenomena in the experiment, the following viewpoints were proposed: The sea of resistance CdTe is a barrier to alkali metals. Based on this point of view, some theoretical deductions and estimations have been made to explain some of the phenomena that have appeared in the experiment.